丝印：K10E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45 mA)

文件：425.38 Kbytes 页数：10 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.7A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.38Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：320.07 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 9.5 A \nPower Dissipation PD 130 W \nDrain-Source voltage VDSS 800 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

TO-220SIS

TOSHIBA/东芝

上传：深圳市鼎欣微电子有限公司

TO-220SIS

TOSHIBA/东芝

上传：深圳市鼎欣微电子有限公司