Trench Gate Power MOSFET

Trench Gate Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

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艾赛斯

Trench Gate Power MOSFET

Littelfuse

力特

Product Scout Automotive

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MOS FIELD EFFECT TRANSISTOR

Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) • Designed for automotive application and

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MOS FIELD EFFECT TRANSISTOR

Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.40 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati

文件：111.71 Kbytes 页数：8 Pages

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