Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Features Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mo

文件：579.55 Kbytes 页数：5 Pages

IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 500W TO247

IXYS

艾赛斯

B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

文件：514.169 Kbytes 页数：6 Pages

IXYS

艾赛斯

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Features Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mo

文件：579.55 Kbytes 页数：5 Pages

IXYS

艾赛斯