N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

Power MOSFET

文件：198.14 Kbytes 页数：7 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

Polar™ HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Fast Recovery Diode • Avalanche Rated • Low Package Inductance Advantages • Easy to Mount • Space Savings • High Power Density Applications • Hig

文件：124.22 Kbytes 页数：4 Pages

IXYS

艾赛斯

Power MOSFETs

文件：135.72 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

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