| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IXFT7N90Q | HiPerFETTM Power MOSFETs Q-Class HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switch 文件:55.71 Kbytes 页数:2 Pages | IXYS 艾赛斯 | IXYS | |
IXFT7N90Q | HiPerFET Power MOSFETs Q-Class 文件:141.1 Kbytes 页数:2 Pages | IXYS 艾赛斯 | IXYS | |
IXFT7N90Q | N通道HiPerFET • 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关(UIS)\n• 快速本征整流器; | Littelfuse 力特 | Littelfuse | |
N-CHANNEL POWER MOSFET 文件:249.1 Kbytes 页数:8 Pages | Fairchild 仙童半导体 | Fairchild | ||
N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.) @ VDS= 900V • Lower RDS(ON): 1.247Ω(Typ.) 文件:246.12 Kbytes 页数:8 Pages | Fairchild 仙童半导体 | Fairchild | ||
isc N-Channel MOSFET Transistor 文件:272.99 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC |
技术参数
- Maximum On-Resistance @ 25 ℃ (Ohm):
1.5
- Continuous Drain Current @ 25 ℃ (A):
7
- Gate Charge (nC):
56
- Thermal resistance [junction-case](K/W):
0.7
- Configuration:
Single
- Package Type:
TO-268S
- Power Dissipation (W):
180
- Maximum Reverse Recovery (ns):
250
- Sample Request:
No
- Check Stock:
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-268S |
52388 |
原装正品 华强现货 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
25+ |
TO-268 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
2022+ |
TO-268-3,D3Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-268D3PAK |
42736 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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