HiPerFET Power MOSFETs Q-Class

Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ●

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IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器\n;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require sur

文件：262.47 Kbytes 页数：10 Pages

Motorola

摩托罗拉

Power Field Effect Transistor

文件：287.06 Kbytes 页数：11 Pages

ONSEMI

安森美半导体