isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

HiPerFETTM Power MOSFETs Q-CLASS

文件：100.36 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFETTM Power MOSFETs Q-CLASS

Littelfuse

力特

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● U

文件：112.37 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

文件：324.94 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFETTM Power MOSFETs Q-CLASS

文件：100.36 Kbytes 页数：2 Pages

IXYS

艾赛斯