首页 >IXFH90N20Q>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXFH90N20Q | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
IXFH90N20Q | HiPerFETTM Power MOSFETs Q-CLASS | IXYS IXYS Integrated Circuits Division | IXYS | |
HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=98A?? Applications •HighfrequencyDC-DCconverters Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=98A?? Applications •HighfrequencyDC-DCconverters Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Applications •HighfrequencyDC-DCconverters •Lead-Free Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=94A?? Applications •HighfrequencyDC-DCconverters Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SMPSMOSFET Applications •HighfrequencyDC-DCconverters •Lead-Free Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETTMPowerMOSFETsQ-CLASS | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastintrinsicrectifier •Fastswitching •Moldi | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastintrinsicrectifier •Fastswitching •Moldi | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsQ-CLASS | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号：
IXFH90N20Q
- 制造商：
IXYS
- 制造商全称：
IXYS Corporation
- 功能描述：
HiPerFETTM Power MOSFETs Q-CLASS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IXYS |
23+ |
TO-3P |
500 |
专做原装正品,假一罚百! |
询价 | ||
IXYS |
18+ |
TO-247 |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
IXYS |
23+ |
TO-247 |
553 |
询价 | |||
IXYS/艾赛斯 |
23+ |
TO-3P |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
IXYS |
22+ |
TO-3P |
5000 |
绝对全新原装现货 |
询价 | ||
isc |
2024 |
TO-247 |
140 |
国产品牌isc,可替代原装 |
询价 | ||
IXYS |
1931+ |
N/A |
30 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
TO-247 |
32350 |
原装正品 假一罚十 公司现货 |
询价 |
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