HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

文件：114.2 Kbytes 页数：4 Pages

IXYS

艾赛斯

MOSFET N-CH 500V 30A TO-264AA

Littelfuse

力特

HiPerFET Power MOSFETs ISOPLUS247

文件：92.65 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 160mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：329.75 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs ISOPLUS247

文件：92.65 Kbytes 页数：4 Pages

IXYS

艾赛斯