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IXFK16N90Q

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS(on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Easy

文件:72.5 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFK16N90Q

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件:329.61 Kbytes 页数:2 Pages

ISC

无锡固电

IXFK16N90Q

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

IXFT16N90Q

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS(on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • Easy

文件:72.5 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFX16N90

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件:368.53 Kbytes 页数:2 Pages

ISC

无锡固电

IXFX16N90

HiPerFET Power MOSFETs

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast i

文件:267.47 Kbytes 页数:2 Pages

IXYS

艾赛斯

技术参数

  • Package Style:

    TO-264

供应商型号品牌批号封装库存备注价格
IXYS
1931+
N/A
18
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询价
IXYS
25+
TO-264
326
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询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
TO2643 TO264AA
9000
原厂渠道,现货配单
询价
IXYS
2022+
TO-264-3,TO-264AA
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS
25+
TO-264
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
24+
8866
询价
IXYS
23+
模块
63841
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IXYS/艾赛斯
23+
TO-264
59580
原装正品 华强现货
询价
IXYS
23+
TO-264
5000
原装正品,假一罚十
询价
更多IXFK16N90Q供应商 更新时间2026-2-2 10:18:00