HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Ap

文件：51.77 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Back Surface) Single MOSFET Die Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

文件：42.06 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 85V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.28 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Ap

文件：51.77 Kbytes 页数：2 Pages

IXYS

艾赛斯