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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
06N60E	文件：561.49 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
AIHD06N60R	文件：1.92413 Mbytes Page：16 Pages	IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
AIHD06N60RF	文件：1.74081 Mbytes Page：16 Pages	IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
CJP06N60	文件：227.22 Kbytes Page：4 Pages	PowerfiledEffectTransistor FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
CMT06N60	文件：193.63 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic	CHAMPChampion Microelectronic Corp. 虹冠虹冠电子	CHAMP
CMT06N60	文件：246.73 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR	CHAMPChampion Microelectronic Corp. 虹冠虹冠电子	CHAMP
CMT06N60	文件：191.5 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
EMD06N60A	文件：199.56 Kbytes Page：6 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
EMD06N60CS	文件：200.92 Kbytes Page：5 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
EMD06N60F	文件：177.2 Kbytes Page：5 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
FMC06N60ES	文件：332.86 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FMC06N60ES	文件：548.64 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMI06N60ES	文件：547.29 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMP06N60E	文件：561.49 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMP06N60ES	文件：537.45 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMP06N60ES	文件：305.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FMV06N60E	文件：529.48 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMV06N60ES	文件：547.53 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FTA06N60C	文件：54.71 Kbytes Page：6 Pages	N-ChannelEnhancement InPowerProductLines	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
H06N60	文件：71.89 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMC 华昕	HSMC

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	ITP06N60R	IPS	21+ROHS	TO-220	33500	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市惊羽科技有限公司	ITP06N60R	IPS-华润芯功率	24+25+/26+27+	TO-220-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市晨豪科技有限公司	ITP06N65A	IPS	23+	TO-220	89630	当天发货全新原装现货	询价
深圳兆威电子有限公司	ITP08N60A	VB	2019	TO-220	55000	绝对原装正品假一罚十!	询价
深圳市宏捷佳电子科技有限公司	ITP08N60A	IPS	23+	TO-TO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳市新力诚科技有限公司	ITP08N60A	IPS	2020+	TO-220	50360	公司代理品牌,原装现货超低价清仓!	询价
深圳市国宇半导体科技有限公司	ITP08N60A	IPS	23+	TO-220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	ITP08N60A	IPS	TO-220	22+	6000	十年配单,只做原装	询价
深圳市吉利鑫科技发展有限公司	ITP08N60A	IPS	2022+	TO-220	79999		询价
易创佳业科技（深圳）有限公司	ITP08N60A	IPS	23+	TO-220	6000	原装正品，支持实单	询价

更多ITP06N60R供应商更新时间2024-6-2 11:10:00

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