FMV06N60E资料datasheet下载批发供应富士通-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FMV06N60E	文件：529.48 Kbytes Page：5 Pages	N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica 文件：529.48 Kbytes 页数：5 Pages	Fuji 富士通	Fuji
FMV06N60ES	文件：547.53 Kbytes Page：5 Pages	N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica 文件：547.53 Kbytes 页数：5 Pages	Fuji 富士通	Fuji
FMV06N60E	文件：300 bytes Page：1 Pages	功率MOSFET 600V-700V	FUJI 富士通	FUJI
FMV06N60ES	文件：300 bytes Page：1 Pages	功率MOSFET 600V-700V	FUJI 富士通	FUJI

更多FMV06N60E供应商更新时间2025-12-5 10:02:00