N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability Applications

文件：531.74 Kbytes 页数：5 Pages

FUJI

富士通

功率MOSFET 800V-900V

FUJI

富士通

900V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Switch Mode Power Supply(SMPS) • Adapter & Charger • AC-DC Switching Power Supply

文件：1.0123 Mbytes 页数：6 Pages

HUIXIN

慧芯电子

900V N-Channel MOSFETs

Features - High efficient switched mode power supplies - TV Power - 900V,9A, RDS(ON) =1.5Ω@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Adapter/charger - LED Lighting

文件：915.78 Kbytes 页数：5 Pages

POTENS

博盛半导体

N-channel Enhancement-mode Power MOSFET

文件：630.44 Kbytes 页数：5 Pages

SSC

Silicon Standard Corp.