General purpose (dual transistors)

Features 1) Two 2SC2412AK chips in a EMT or UMT or SMT package.

文件：46.4 Kbytes 页数：3 Pages

ROHM

罗姆

N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V APPLICATIONS ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：328.19 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel enhancement mode power MOSFET

Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply

文件：363.88 Kbytes 页数：7 Pages

Fuji

富士通

General purpose (dual transistors)

ROHM

罗姆

功率MOSFET 600V-700V

FUJI

富士通

功率MOSFET 600V-700V

FUJI

富士通

包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列 描述：TRANS GP NPN 50V 5 PIN

Rohm Semiconductor