isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=12A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

文件：546.94 Kbytes 页数：5 Pages

FUJI

富士通

功率MOSFET 400V-500V

FUJI

富士通

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：617.23 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Optimized Switch for Discontinuous Current Mode Power Factor Correction

文件：438.39 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：617.23 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体