500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：617.23 Kbytes 页数：9 Pages

Fairchild

仙童半导体

Optimized Switch for Discontinuous Current Mode Power Factor Correction

文件：438.39 Kbytes 页数：8 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

ONSEMI

安森美半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：617.23 Kbytes 页数：9 Pages

Fairchild

仙童半导体

HEXFET짰 Power MOSFET

文件：123.49 Kbytes 页数：8 Pages

IRF

Polar Power MOSFET HiperFET

Polar™ Power MOSFET HiperFET™ N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：150.99 Kbytes 页数：5 Pages

IXYS

艾赛斯