N-Channel Enhancement

InPower Product Lines

文件：54.71 Kbytes 页数：6 Pages

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N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：71.89 Kbytes 页数：6 Pages

HSMC

华昕

IGBT in TRENCHSTOP and Fieldstop technology

文件：460.08 Kbytes 页数：12 Pages

Infineon

英飞凌

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

文件：331.26 Kbytes 页数：12 Pages

Infineon

英飞凌