isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：332.86 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

文件：548.64 Kbytes 页数：5 Pages

FUJI

富士通

功率MOSFET 600V-700V

FUJI

富士通

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes 页数：13 Pages

INFINEON

英飞凌

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

•75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh

文件：459.14 Kbytes 页数：15 Pages

INFINEON

英飞凌

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes 页数：13 Pages

INFINEON

英飞凌