FMP06N60E说明书PDF资料贸易商富士通Fuji-114ic电子网

首页 >FMP06N60E>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
FMP06N60E	文件：561.49 Kbytes Page：5 Pages	N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica 文件：561.49 Kbytes 页数：5 Pages	Fuji 富士通	Fuji
FMP06N60ES	文件：537.45 Kbytes Page：5 Pages	N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica 文件：537.45 Kbytes 页数：5 Pages	Fuji 富士通	Fuji
FMP06N60ES	文件：305.77 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：305.77 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
FMP06N60E	文件：300 bytes Page：1 Pages	功率MOSFET 600V-700V	FUJI 富士通	FUJI
FMP06N60ES	文件：300 bytes Page：1 Pages	功率MOSFET 600V-700V	FUJI 富士通	FUJI

更多FMP06N60E供应商更新时间2025-12-15 11:02:00