零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FMP06N60E | N-CHANNEL SILICON POWER MOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | |
N-CHANNEL SILICON POWER MOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PowerfiledEffectTransistor FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
POWERFIELDEFFECTTRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | CHAMPChampion Microelectronic Corp. 虹冠虹冠电子 | CHAMP | ||
POWERFIELDEFFECTTRANSISTOR | CHAMPChampion Microelectronic Corp. 虹冠虹冠电子 | CHAMP | ||
POWERFIELDEFFECTTRANSISTOR | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | Fuji | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC |
详细参数
- 型号:
FMP06N60E
- 制造商:
FUJI
- 制造商全称:
Fuji Electric
- 功能描述:
N-CHANNEL SILICON POWER MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
85700 |
正品授权货源可靠 |
询价 | |||
FUJI |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
VB |
2019 |
TO-220AB |
55000 |
绝对原装正品假一罚十! |
询价 | ||
FUJITSU/富士通 |
TO220F |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
F |
23+ |
TO-220AB |
10000 |
公司只做原装正品 |
询价 | ||
FUJITSU/富士通 |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FUJITSU/富士通 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
FUJI |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
FUJITSU/富士通 |
22+21+ |
TO220F |
12388 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
isc |
2024 |
TO-220 |
2500 |
国产品牌isc,可替代原装 |
询价 |
相关规格书
更多- FMP06N60ES
- FMP07N50E
- FMP1
- FMP1.1
- FMP1_11
- FMP100JR-52-0R27
- FMP100JR-52-0R39
- FMP100JR-52-0R51
- FMP100JR-52-0RS
- FMP100JR-52-100R
- FMP100JR-52-12R
- FMP100JR-52-150R
- FMP100JR-52-16K
- FMP100JR-52-180R
- FMP100JR-52-1K
- FMP100JR-52-1K5
- FMP11N60E
- FMP1216AAX
- FMP12N50E
- FMP12N60ES
- FMP139S115
- FMP13N60ES
- FMP1617CA0
- FMP1617CA0-G60E
- FMP1617CA0-GXXX
- FMP1617CA1
- FMP1617CA4
- FMP1617CA7
- FMP1617CA7-G60E
- FMP1617CA7-GXXX
- FMP1617CAX
- FMP1617CAX-G60E
- FMP1617CAX-GXXX
- FMP1617CC0
- FMP1617CC0-G60E
- FMP1617CC0-GXXX
- FMP1617CC1
- FMP1617CC4
- FMP1617CC7
- FMP1617CC7-G60E
- FMP1617CC7-GXXX
- FMP1617CCX
- FMP1617CCX-G70E
- FMP1617CCX-GXXX
- FMP1617DA0
相关库存
更多- FMP077S104
- FMP08N50E
- FMP-1
- FMP1_1
- FMP100
- FMP100JR-52-0R33
- FMP100JR-52-0R47
- FMP100JR-52-0R82
- FMP100JR-52-100K
- FMP100JR-52-10K
- FMP100JR-52-150K
- FMP100JR-52-15K
- FMP100JR-52-180K
- FMP100JR-52-18K
- FMP100JR-52-1K2
- FMP10N60E
- FMP12-0.85K
- FMP1216ACX
- FMP12N50ES
- FMP139S104
- FMP13N60E
- FMP16.48
- FMP1617CA0-FXXX
- FMP1617CA0-G70E
- FMP1617CA0-HXXX
- FMP1617CA2
- FMP1617CA5
- FMP1617CA7-FXXX
- FMP1617CA7-G70E
- FMP1617CA7-HXXX
- FMP1617CAX-FXXX
- FMP1617CAX-G70E
- FMP1617CAX-HXXX
- FMP1617CC0-FXXX
- FMP1617CC0-G70E
- FMP1617CC0-HXXX
- FMP1617CC2
- FMP1617CC5
- FMP1617CC7-FXXX
- FMP1617CC7-G70E
- FMP1617CC7-HXXX
- FMP1617CCX-FXXX
- FMP1617CCX-G85E
- FMP1617CCX-HXXX
- FMP1617DAX