N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

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N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica

文件：537.45 Kbytes 页数：5 Pages

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isc N-Channel MOSFET Transistor

文件：305.77 Kbytes 页数：2 Pages

ISC

无锡固电

功率MOSFET 600V-700V

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功率MOSFET 600V-700V

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