丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.01 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.18 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤2.7Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.49 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.54 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.42 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.44 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.95Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.63 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.95Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.69 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.58 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.75Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.42 Kbytes 页数：2 Pages

ISC

无锡固电