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ISPD03N60C3

Marking:DPAK;Package:TO-252;N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISPP03N60C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultralowcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA03N60C3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA03N60C3

COOLMOSPOWERTRANSISTOR

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA03N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA03N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB03N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB03N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB03N60C3

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SPB03N60C3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
Isocom
24+
NA
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ISOCOM
12+
DIPSOP
23108
原装现货
询价
ISOCOM
25+
DIPSOP
65248
百分百原装现货 实单必成
询价
ISOCOM
24+
40000
询价
ISOCOM
23+
22646
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ISOCOM
23+
DIP-6
9888
专做原装正品,假一罚百!
询价
ISOCOM
23+
14+
38493
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
更多ISPD03N60C3供应商 更新时间2025-5-17 14:02:00