N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

文件：338.99 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：308.23 Kbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes 页数：14 Pages

Infineon

英飞凌

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes 页数：14 Pages

Infineon

英飞凌