ISPD02N60S5中文资料无锡固电数据手册PDF规格书

• DESCRITION

• Ultra low effective capacitance

• Improved transconductance

• FEATURES

• Static drain-source on-resistance: RDS(on)≤3Ω

• Enhancement mode:

• 100 avalanche tested

• Minimum Lot-to-Lot variations for robust device performance and reliable operation