丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance an

文件：337.66 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：306.41 Kbytes 页数：10 Pages

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC0) for target applications

文件：349.26 Kbytes 页数：10 Pages

Infineon

英飞凌