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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
ISPP02N60S5	文件：337.66 Kbytes Page：2 Pages	N-Channel MOSFET Transistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
02N60S5	文件：1.68505 Mbytes Page：8 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
02N60S5	文件：1.67706 Mbytes Page：8 Pages	PowerMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
02N60S5	文件：1.71684 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
ISPD02N60S5	文件：335.18 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPB02N60S5	文件：188.85 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPB02N60S5	文件：306.41 Kbytes Page：10 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB02N60S5	文件：349.26 Kbytes Page：10 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB02N60S5	文件：1.10342 Mbytes Page：9 Pages	N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPD02N60S5	文件：1.07863 Mbytes Page：9 Pages	PowerMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPD02N60S5	文件：251.9 Kbytes Page：10 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapp	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPD02N60S5	文件：335.18 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPN02N60S5	文件：10.54036 Mbytes Page：9 Pages	CoolMOS??PowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPN02N60S5	文件：227.67 Kbytes Page：9 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPP02N60S5	文件：306.41 Kbytes Page：10 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPP02N60S5	文件：357.04 Kbytes Page：10 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPP02N60S5	文件：337.66 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformancean	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPP02N60S5	文件：1.09085 Mbytes Page：9 Pages	N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPU02N60S5	文件：1.90721 Mbytes Page：9 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPU02N60S5	文件：246.79 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	ISPP1184	PHILIPS/飞利浦	22+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市安富世纪电子有限公司	ISPP300ISI	IS	21+		50000	全新原装正品现货,支持订货	询价
深圳市环球伟业电子有限公司	ISPP300ISI	IS	21+		210	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市威雅利发展有限公司	ISPP300ISI	IS	12		210	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市特顺芯科技有限公司	ISPPA300IST	ST	00+		875		询价
深圳市赛美科科技有限公司	ISPPA300IST	ST			68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市能元时代电子有限公司	ISPPA300IST	ST	23+		47403	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
上海涵恩科技有限公司（原上海凌岳电子）	ISPPA300IST	ST	2023+		3000	进口原装现货	询价
深圳市永贝尔科技有限公司	ISPPAC10	LATTICE	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
深圳市赛尔通科技有限公司	ISPPAC1001PI	LAT	23+		65480		询价

更多ISPP02N60S5供应商更新时间2024-5-4 11:10:00

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