丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤2.7Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.49 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：261.72 Kbytes 页数：12 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

文件：374.83 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

文件：440.34 Kbytes 页数：10 Pages

Infineon

英飞凌