ISPD02N80C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.7Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPA02N80C3

PowerMOSFET

FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC

SPA02N80C3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

SPA02N80C3

CoolMOSTMPowerTransistor

SPA02N80C3

CoolMOSTMPowerTransistor

SPA02N80C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPD02N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

SPD02N80C3

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

SPD02N80C3

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.7Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPD02N80C3

CoolMOSTMPowerTransistor