Logic-Level Gate Drive

文件：202.41 Kbytes 页数：11 Pages

IRF

Logic-Level Gate Drive

Infineon

英飞凌

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：202.22 Kbytes 页数：10 Pages

IRF

isc N-Channel MOSFET Transistor

文件：246.94 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：257.07 Kbytes 页数：10 Pages

IRF