| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRLU024 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:1.38953 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLU024 | Power MOSFET FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR024, SiHLR024) • Straight lead (IRLU024, SiHLU024) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v 文件:472.42 Kbytes 页数:13 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLU024 | Power MOSFET 文件:1.2042 Mbytes 页数:10 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLU024 | Power MOSFET 文件:1.2042 Mbytes 页数:10 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLU024 | Power MOSFET 文件:463.68 Kbytes 页数:11 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRLU024 | Power MOSFET Dynamic dV/dt rating\nSurface-mount (IRLR024, SiHLR024)\nStraight lead (IRLU024, SiHLU024); | Vishay 威世 | Vishay | |
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件:162.2 Kbytes 页数:10 Pages | IRF | IRF | ||
Logic-Level Gate Drive Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件:173.02 Kbytes 页数:11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件:304.82 Kbytes 页数:10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:1.38953 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
技术参数
- OPN:
IRLU024NPBF
- Qualification:
Non-Automotive
- Package name:
IPAK
- VDS max:
55 V
- RDS (on) @10V max:
65 mΩ
- RDS (on) @4.5V max:
110 mΩ
- ID @25°C max:
17 A
- QG typ @4.5V:
10 nC
- Polarity:
N
- VGS(th) min:
1 V
- VGS(th) max:
2 V
- VGS(th):
1.5 V
- Technology:
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO252 |
20300 |
VISHAY/威世原装特价IRLU024即刻询购立享优惠#长期有货 |
询价 | ||
IR |
12+ |
TO-251 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR/VISH |
24+ |
65230 |
询价 | ||||
VISHAY |
25+ |
TO-251 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay Siliconix |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
21+ |
TO-251 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-251-3 短引线,IPak,TO-251A |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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