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IRLU024

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件:1.38953 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRLU024

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRLR024, SiHLR024) • Straight lead (IRLU024, SiHLU024) • Available in tape and reel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance please see www.v

文件:472.42 Kbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRLU024

Power MOSFET

文件:1.2042 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRLU024

Power MOSFET

文件:1.2042 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRLU024

Power MOSFET

文件:463.68 Kbytes 页数:11 Pages

VishayVishay Siliconix

威世威世科技公司

IRLU024

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRLR024, SiHLR024)\nStraight lead (IRLU024, SiHLU024);

Vishay

威世

IRLU024N

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件:162.2 Kbytes 页数:10 Pages

IRF

IRLU024N

Logic-Level Gate Drive

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件:173.02 Kbytes 页数:11 Pages

IRF

IRLU024NPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件:304.82 Kbytes 页数:10 Pages

IRF

IRLU024PBF

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件:1.38953 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

技术参数

  • OPN:

    IRLU024NPBF

  • Qualification:

    Non-Automotive

  • Package name:

    IPAK

  • VDS max:

    55 V

  • RDS (on) @10V max:

    65 mΩ

  • RDS (on) @4.5V max:

    110 mΩ

  • ID @25°C max:

    17 A

  • QG typ @4.5V:

    10 nC

  • Polarity:

    N

  • VGS(th) min:

    1 V

  • VGS(th) max:

    2 V

  • VGS(th):

    1.5 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
VISHAY/威世
25+
TO252
20300
VISHAY/威世原装特价IRLU024即刻询购立享优惠#长期有货
询价
IR
12+
TO-251
15000
全新原装,绝对正品,公司现货供应。
询价
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR/VISH
24+
65230
询价
VISHAY
25+
TO-251
1675
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-251
50000
全新原装正品现货,支持订货
询价
IR
21+
TO-251
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
TO2513 Short Leads IPak TO251A
9000
原厂渠道,现货配单
询价
IR
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Vishay Siliconix
2022+
TO-251-3 短引线,IPak,TO-251A
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多IRLU024供应商 更新时间2025-12-10 17:47:00