AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

文件：215.66 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

文件：281.89 Kbytes 页数：12 Pages

IRF

isc N-Channel MOSFET Transistor

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ISC

无锡固电

丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

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ISC

无锡固电

Logic-Level Gate Drive

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KERSEMI

N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半导体

Power MOSFET

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VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.2042 Mbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

采用 I-Pak 封装的 55V 单 N 通道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• 逻辑电平;

Infineon

英飞凌

AUTOMOTIVE MOSFET

Infineon

英飞凌