IRLRU3103PBF技术资料参数供应代理无锡固电-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRLRU3103PBF	文件：292.56 Kbytes Page：11 Pages	Logic-Level Gate Drive Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：292.56 Kbytes 页数：11 Pages	IRF	IRF
IRLRU3103PBF	文件：291.6 Kbytes Page：11 Pages	HEXFET짰 Power MOSFET 文件：291.6 Kbytes 页数：11 Pages	IRF	IRF
IRLU3103	文件：164.75 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A?? 文件：164.75 Kbytes 页数：10 Pages	IRF	IRF
IRLU3103	文件：247.35 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：247.35 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRLU3103PBF	文件：292.56 Kbytes Page：11 Pages	Logic-Level Gate Drive Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：292.56 Kbytes 页数：11 Pages	IRF	IRF

更多IRLRU3103PBF供应商更新时间2026-1-17 10:02:00