采用 I-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• 逻辑电平;

Infineon

英飞凌

HEXFET Power MOSFET

VDSS= 55V RDS(on)= 0.027Ω ID= 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

文件：310.73 Kbytes 页数：10 Pages

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

文件：217.58 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：266.77 Kbytes 页数：11 Pages

IRF

isc Silicon NPN Power Transistor

文件：267.37 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：1.09339 Mbytes 页数：11 Pages

KERSEMI

Advanced Process Technology

文件：333.59 Kbytes 页数：11 Pages

IRF

采用 I-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度\n• 逻辑电平;

Infineon

英飞凌