DIGITAL AUDIO MOSFET

VDS -55 V RDS(ON) typ. @ VGS = -10V 93 mΩ RDS(ON) typ. @ VGS = -4.5V 150 mΩ Qg typ. 31 nC TJ max 175 °C Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistan

文件：245.95 Kbytes 页数：10 Pages

IRF

-60V P-Channel MOSFET

Description Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repet

文件：396.62 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：D-PARK；Package：TO-252；isc P-Channel MOSFET Transistor

文件：358.9 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：1.03004 Mbytes 页数：10 Pages

KERSEMI

采用 D-Pak 封装的 -55V 单 P 通道 IR MOSFET

Infineon

英飞凌

DIGITAL AUDIO MOSFET

Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are o

文件：299.57 Kbytes 页数：10 Pages

IRF

丝印：LR9343；Package：TO-252；-60V P-Channel MOSFET

Description Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repet

文件：396.62 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：LR9343；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features * Vos =60VIo =-14A Roscn 88mQ @ Vos=-10v (TYP) Rosiow 120m Q @ Vos=-4.5V (TYP)

文件：2.12093 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Advanced Process Technology

文件：308.71 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：308.71 Kbytes 页数：11 Pages

IRF