丝印：LR9343；Package：TO-252；-60V P-Channel MOSFET

Description Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repet

文件：396.62 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：LR9343；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features * Vos =60VIo =-14A Roscn 88mQ @ Vos=-10v (TYP) Rosiow 120m Q @ Vos=-4.5V (TYP)

文件：2.12093 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

key parameters optimlzed for class-d audio amplifier applications

文件：308.71 Kbytes 页数：11 Pages

IRF

P-Channel 60 V (D-S) MOSFET

文件：1.12137 Mbytes 页数：8 Pages

VBSEMI

微碧半导体