丝印：LR9343；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features * Vos =60VIo =-14A Roscn 88mQ @ Vos=-10v (TYP) Rosiow 120m Q @ Vos=-4.5V (TYP)

文件：2.12093 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

DIGITAL AUDIO MOSFET

VDS -55 V RDS(ON) typ. @ VGS = -10V 93 mΩ RDS(ON) typ. @ VGS = -4.5V 150 mΩ Qg typ. 31 nC TJ max 175 °C Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistan

文件：245.95 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：1.03004 Mbytes 页数：10 Pages

KERSEMI

isc P-Channel MOSFET Transistor

文件：304.05 Kbytes 页数：2 Pages

ISC

无锡固电