HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

文件：307.21 Kbytes 页数：10 Pages

IRF

MOSFET N-CH 30V 35A I-PAK

Infineon

英飞凌

Silicon P-channel MOS FET

Silicon P-channel MOS FET For switching circuits Overview FJ330301 is P-channel small signal MOS FET employed small size surface mounting package. Features ● Low drain-source ON resistance: RDS(on) typ. = 4 Ω (VGS = -4.0 V) ● High-speed switching ● Small size surface mounting package: SSSMi

文件：579.12 Kbytes 页数：5 Pages

PANASONIC

松下

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：244.69 Kbytes 页数：4 Pages

GTM

勤益投资控股

Quad Operational Amplifier

Description The KA3303 series is a monolithic Quad operational amplifier consisting of four independent amplifiers. The device has high gain, internally frequency, compensated operational amplifiers designed to operate from a single power supply or dual power supplies over a wide range of voltage

文件：84.69 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体