丝印：D-PARK；Package：TO-252；isc N-Channel MOSFET Transistor

• FEATURES • Drain Current :ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 50mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • LED backl

文件：351.27 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：D-PARK；Package：TO-252；isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤9.5mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Be suitable for use as a high side switch in SMPS and general purpose applications.

文件：361.62 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D-PARK；Package：TO-252；isc P-Channel MOSFET Transistor

文件：358.9 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D-PARK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：362.05 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D-PARK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：362.24 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D-PARK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：361.79 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D-PARK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：363.07 Kbytes 页数：2 Pages

ISC

无锡固电