丝印：D-PARK；Package：TO-252；isc N-Channel MOSFET Transistor

• FEATURES • Drain Current :ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 50mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • LED backl

文件：351.27 Kbytes 页数：3 Pages

ISC

无锡固电

高压 HV MOS

AiT-Semi

创瑞科技

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such

文件：71.18 Kbytes 页数：3 Pages

AnalogPower

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters

文件：189.44 Kbytes 页数：5 Pages

AnalogPower

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such

文件：150.42 Kbytes 页数：5 Pages

AnalogPower

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

文件：982.62 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

文件：985.13 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such

文件：93.24 Kbytes 页数：3 Pages

AnalogPower

N-Channel MOSFET uses advanced SGT technology

文件：2.97899 Mbytes 页数：5 Pages

DOINGTER

杜因特

MOSFET

AnalogPower

美商亚柏