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IRLR9343PBF中文资料PDF规格书
IRLR9343PBF规格书详情
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Multiple Package Options
Lead-Free
产品属性
- 型号：
IRLR9343PBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 105mOhms 31nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
12+ |
TO-252 |
343 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
24+ |
TO-252 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
IR |
1950+ |
TO-252 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
21+ |
TO-252 |
1532 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
询价 | ||
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
2021+ |
TO-252 |
3500 |
十年专营原装现货,假一赔十 |
询价 | ||
IR |
23+ |
D-PAK |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
IR |
2023+ |
TO-252 |
6893 |
专注全新正品,优势现货供应 |
询价 | ||
ADI |
2022+ |
LFCSP |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VBSEMI |
19+ |
TO-252 |
29600 |
绝对原装现货,价格优势! |
询价 |
