Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：328.14 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A⑤)

Infineon

英飞凌

Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：328.14 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

VDSS = 30V R DS(on) = 0.007Ω ID = 61A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：113.34 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

VDSS = 30V R DS(on) = 0.007Ω ID = 61A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：1.61932 Mbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Infineon

英飞凌