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IRLI2203NPBF中文资料IRF数据手册PDF规格书
IRLI2203NPBF规格书详情
VDSS = 30V R
DS(on) = 0.007Ω
ID = 61A
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Logic-Level Gate Drive
Advanced Process Technology
solated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
产品属性
- 型号：
IRLI2203NPBF
- 功能描述：
MOSFET MOSFT 30V 61A 7mOhm 73.3nC Log Lvl
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
93 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
11+ |
TO-220 |
46 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
2025+ |
TO220-3 |
3550 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IR |
21+ |
TO-220F |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
IR |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
IR |
24+ |
TO-220 |
46 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
23+ |
TO-220-3 |
24755 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
24+ |
TO-220-3 |
720 |
询价 | |||
IR |
17+ |
TO-220F |
6200 |
100%原装正品现货 |
询价 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 |
