IRLI2203中文资料IRF数据手册PDF规格书
IRLI2203规格书详情
描述 Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Ultra Low On-Resistance
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. = 4.8mm
● Logic-Level Gate Drive
● RDS(on) Specified at VGS=5.0V & 10V
产品属性
- 型号：
IRLI2203
- 制造商：
IRF
- 制造商全称：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
5550 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
11+ |
TO-220 |
46 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
1948+ |
TO-220 |
18562 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
2025+ |
TO220-3 |
3550 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IR |
24+ |
TO-220F |
5778 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
INTERNATIONA |
05+ |
原厂原装 |
4441 |
只做全新原装真实现货供应 |
询价 | ||
IR |
21+ |
TO-220F |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
I |
22+ |
TO-220FP |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
原装正品 |
23+ |
TO-220-3 |
28957 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
23+ |
TO-220F |
35890 |
询价 |
