IRLI2203G中文资料PDF规格书
IRLI2203G规格书详情
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Ultra Low On-Resistance
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. = 4.8mm
● Logic-Level Gate Drive
● RDS(on) Specified at VGS=5.0V & 10V
产品属性
- 型号:
IRLI2203G
- 制造商:
IRF
- 制造商全称:
International Rectifier
- 功能描述:
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
164 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
24+ |
TO 220F |
161102 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2022 |
TO-220F |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
1948+ |
TO-220 |
18562 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
23+ |
TO-220F |
35890 |
询价 | |||
IR |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
IR |
TO-220F |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
08+(pbfree) |
TO-220FullPak(Iso) |
8866 |
询价 | |||
IR |
2020+ |
TO-220F |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |