HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：255.29 Kbytes 页数：8 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：264.25 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：264.25 Kbytes 页数：9 Pages

IRF

Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.058Ω ID = 17 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ● Lower RDS(ON) : 0.046Ω (Typ.)

文件：258.04 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：271.45 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：348.83 Kbytes 页数：2 Pages

ISC

无锡固电