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IRLI540NPBF中文资料PDF规格书
IRLI540NPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Logic-Level Gate Drive
● Advanced Process Technology
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. = 4.8mm
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号:
IRLI540NPBF
- 功能描述:
MOSFET MOSFT 100V 20A 44mOhm 49.3nC LogLvl
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
I |
2020+ |
TO-220F |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
TO-220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INFINEON/英飞凌 |
2021+ |
30000 |
十年专营原装现货,假一赔十 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO220F |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
VB |
21+ |
TO-220F |
10000 |
原装现货假一罚十 |
询价 | ||
INFINEON/英飞凌 |
22+ |
SOP8 |
37500 |
只做原装进口现货 |
询价 | ||
VB |
TO-220F |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
INFINEON/英飞凌 |
2024+实力库存 |
TO220F |
200 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
11+PBF |
TO-262 |
2 |
优势 |
询价 | ||
IR |
23+ |
TO-TO-220F |
12300 |
全新原装真实库存含13点增值税票! |
询价 |