INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)

Introduction The reliability report is a summary of the test data collated since the implementation of the reliability programme. This report will be periodically updated typically on a quarterly basis. Future publications of this report will also include as appropriate additional information to

文件：254.96 Kbytes 页数：6 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

文件：436.28 Kbytes 页数：8 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A)

Infineon

英飞凌