HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：255.82 Kbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

文件：961.63 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：208.55 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

TO-220

IR

国际整流器

上传：深圳市勤思达科技有限公司

TO-263

IR

国际整流器

上传：深圳市汇创佳电子科技有限公司