HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：670.82 Kbytes 页数：10 Pages

IRF

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263(D2PAK) packaging • Surface mount • High speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

文件：316.97 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：680.17 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：680.17 Kbytes 页数：11 Pages

IRF