POWER MOSFET THRU-HOLE (TO-257AA)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

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IRF

Simple Drive Requirements

文件：189.4 Kbytes 页数：7 Pages

IRF

N-Channel MOSFET in a Hermetically sealed

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SEME-LAB

POWER MOSFET THRU-HOLE (TO-257AA)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

文件：189.4 Kbytes 页数：7 Pages

IRF

POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

文件：300.25 Kbytes 页数：6 Pages

IRF

Simple Drive Requirements

文件：189.4 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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Infineon

英飞凌

MOSFETs and JFETs

TT Electronics

HiRel MOSFETs

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Infineon

英飞凌