POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

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IRF

POWER MOSFET THRU-HOLE (TO-257AA)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

文件：189.4 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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Infineon

英飞凌

4.4 mm Series

文件：30.79 Kbytes 页数：1 Pages

PANASONIC

松下

Low Current LED in 짰3 mm Tinted Diffused Package

文件：94.83 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1) Package

Description The TSHA44 series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 radiant power improvement. Features ●

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VISHAYVishay Siliconix

威世威世科技公司