POWER MOSFET THRU-HOLE (TO-257AA)

100V, P-CHANNEL HEXFET® MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all o

文件：257.399 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

文件：261.88 Kbytes 页数：7 Pages

IRF

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

文件：14.71 Kbytes 页数：2 Pages

SEME-LAB

POWER MOSFET THRU-HOLE (TO-257AA)

100V, P-CHANNEL HEXFET® MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all o

文件：257.399 Kbytes 页数：7 Pages

IRF

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A)

100V, P-CHANNEL HEXFET® MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all o

文件：271.53 Kbytes 页数：6 Pages

IRF

Simple Drive Requirements

文件：261.88 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

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英飞凌

Single channel high reliability power MOSFETs

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Infineon

英飞凌

Single channel high reliability power MOSFETs

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Infineon

英飞凌